September 2011
Ammono S.A. the world leader in the production of ammonothermal gallium nitride (GaN) is pleased to announce the introduction of a new class of HIGH TRANSPARENCY n-type substrates.
During the last twelve years Ammono developed a technology allowing to manufacture gallium nitride wafers with carrier concentrations between 2x1017 and 2x1020 cm-3. Today the standard n-type product has got the carrier concentration of 1019cm-3. Responding to market needs Ammono introduces new products based on an innovative n-type material which is characterized by a higher transparency and additionally has got a lower carrier concentration of 3x1017cm-3. In this way ammonothermal GaN substrates present additional advantages for the production of LEDs, UV LEDs and also for photovoltaic applications.
The dislocation density in this material remains at the level of 5x104 cm-2 which is today the best commercially available. Initially Ammono will offer high transparency substrates in form factors of 10 mm x 10 mm square wafers and circular 1” wafers. In 2012 besides its standard 2” n-type AMMONO-GaN substrate Ammono considers the introduction of a 2” product based on this new high-transparency material.
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