GaN
Truly bulk AMMONO-GaN crystals can find applications in manufacturing of optoelectronic (LD, LED) and electronic (HEMT) devices.
Electrical properties
Undoped material - n-type conductivity with:
carrier concentration up to 1019 cm-3
resistivity ρ = 10-3 - 10-2 Ω cm
Semi-insulating (SI) material with:
resistivity ρ = 106 - 1012 Ω cm
(homogeneous over the crystal surface)
p-type material with:
carrier concentration up to 1018 cm-3
resistivity ρ = 101 - 102 Ω cm
Our standard products
C oriented substrates
5 x 5 mm
10 x 10 mm
12 x 12 mm
1"
1,5"
2"
M oriented substrates
5 x 5 mm
5 x 10 mm
10 x 10 mm
10 x 12 mm
10 x 24 mm
The market strategy of AMMONO Sp. z o.o. is to deliver GaN substrates on-demand. If you have your own specifications, expectations, questions please contact our Sales Department
Electrical properties
Undoped material - n-type conductivity with:
carrier concentration up to 1019 cm-3
resistivity ρ = 10-3 - 10-2 Ω cm
Semi-insulating (SI) material with:
resistivity ρ = 106 - 1012 Ω cm
(homogeneous over the crystal surface)
p-type material with:
carrier concentration up to 1018 cm-3
resistivity ρ = 101 - 102 Ω cm
Our standard products
C oriented substrates
5 x 5 mm
10 x 10 mm
12 x 12 mm
1"
1,5"
2"
M oriented substrates
5 x 5 mm
5 x 10 mm
10 x 10 mm
10 x 12 mm
10 x 24 mm
The market strategy of AMMONO Sp. z o.o. is to deliver GaN substrates on-demand. If you have your own specifications, expectations, questions please contact our Sales Department
