July 2011

InGaN laser diode (LD) mini-arrays with unprecedented power levels have been grown by the TopGaN company on the basis of Ammono GaN substrates. Polish Academy of Science, Institute of High Pressure Physics Unipress participated also in the project.

Mini-arrays consisting of 3 or 5 emitters processed on to a single chip were fabricated. The optimal performance was achieved for the 3 emitter array, which attained 2.5 W of optical power at 408-412 nm. The LDs were grown on low-dislocation density GaN substrates that were made by Ammono’s ammonothermal growth method.

Further details of this work are published in the paper, “InGaN Laser Diode Mini-Arrays” by P. Perlin et al in Appl. Phys. Express 4 (2011) 062103