R&D
Research & development is one of the most important activities in mankind history.
Nowadays this kind of activity has own name and established position all over the world. But it presents only our inclination to make our lives easier, more save or just to satisfy our curiosity of outward things and the whole Universe. Very common things at present have been very innovative in the past. It is required years of hard work, passion together with non standard point of view or just luck.
Our company has all necessary attributes and knowledge, therefore our main field from the beginning is research and development on new materials for electronics. Our main R&D directions are semi-conductor materials and we are specializing in high quality gallium nitride (GaN). We established our own ammonothermal method of growing GaN crystals to produce GaN wafers to be used as substrates for research and production of blue and green laser diodes (LDs), detectors and high electron mobility transistors (HEMTs).
The Ammonothermal method for obtaining mono-crystalline GaN is analogous to the well known industrial hydrothermal method of quartz (SiO2) production which results in production of tens of tons of synthetic quartz per year.
The Ammonothermal method was invented by the founders of Ammono and developed by them as a means of producing high quality GaN substrates. The method, materials and wide range of devices are protected by 20 patent applications. The three main advantages of our method are low costs, very well controlled growth on seeds, which leads to high quality and scalability.
The Ammonothermal method itself provides outstanding quality seeds. Such seeds are the basis of further crystal production. Nevertheless we are receptive for all kind of cooperation with reliable partners for the common benefits. Another word our company spares no efforts to make our lives easier.
We were present as invited speakers at following events:
IWBNS-V, 2007 - Salvador, Brasil, 5th International Workshop on Bulk Nitride Semiconductors, September 24-28;
CGCT-4 - Sendai, Japan, The 4th Asian Conference on Crystal Growth and Crystal Technology; Maj 21-24, 2008;
IWN 2008 - Montreux, Switzerland, The International Workshop on Nitride Semiconductors; October 6-10, 2008;
ISGN-2 - Izu Penisula, Japan, Second International Symposium on Growth of III-Nitrides; July 6-9, 2008;
Some of our research result have been published in relevant journals:
[1] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Excellent crystallinity of truly bulk ammonothermal GaN, Journal of Crystal Growth 310 (2008), pp. 3911.
[2] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Bulk ammonothermal GaN, Journal of Crystal Growth 311 (2009), pp. 3015-3018.
[3] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, M. Rudzinski, M. Zajac, Homoepitaxy on bulk ammonothermal GaN, Journal of Crystal Growth 311 (2009), pp. 3058-3062.
[4] R. Kudrawiec, J. Misiewicz, M. Rudzinski, and M. Zajac, Contactless electroreflectance of GaN bulk crystals grown by ammonothermal method and GaN epilayers grown on these Applied Physics Lett. 93 (2008), pp. 061910.
Nowadays this kind of activity has own name and established position all over the world. But it presents only our inclination to make our lives easier, more save or just to satisfy our curiosity of outward things and the whole Universe. Very common things at present have been very innovative in the past. It is required years of hard work, passion together with non standard point of view or just luck.
Our company has all necessary attributes and knowledge, therefore our main field from the beginning is research and development on new materials for electronics. Our main R&D directions are semi-conductor materials and we are specializing in high quality gallium nitride (GaN). We established our own ammonothermal method of growing GaN crystals to produce GaN wafers to be used as substrates for research and production of blue and green laser diodes (LDs), detectors and high electron mobility transistors (HEMTs).
The Ammonothermal method for obtaining mono-crystalline GaN is analogous to the well known industrial hydrothermal method of quartz (SiO2) production which results in production of tens of tons of synthetic quartz per year.
The Ammonothermal method was invented by the founders of Ammono and developed by them as a means of producing high quality GaN substrates. The method, materials and wide range of devices are protected by 20 patent applications. The three main advantages of our method are low costs, very well controlled growth on seeds, which leads to high quality and scalability.
The Ammonothermal method itself provides outstanding quality seeds. Such seeds are the basis of further crystal production. Nevertheless we are receptive for all kind of cooperation with reliable partners for the common benefits. Another word our company spares no efforts to make our lives easier.
We were present as invited speakers at following events:
Some of our research result have been published in relevant journals:
[1] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Excellent crystallinity of truly bulk ammonothermal GaN, Journal of Crystal Growth 310 (2008), pp. 3911.
[2] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Bulk ammonothermal GaN, Journal of Crystal Growth 311 (2009), pp. 3015-3018.
[3] R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, M. Rudzinski, M. Zajac, Homoepitaxy on bulk ammonothermal GaN, Journal of Crystal Growth 311 (2009), pp. 3058-3062.
[4] R. Kudrawiec, J. Misiewicz, M. Rudzinski, and M. Zajac, Contactless electroreflectance of GaN bulk crystals grown by ammonothermal method and GaN epilayers grown on these Applied Physics Lett. 93 (2008), pp. 061910.
